Light emitting device including supporting body and wavelength conversion layer

ABSTRACT

Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and reducing unevenness in light distribution color, and a method of manufacturing the same. A light emitting device  100  includes a light emitting element  20  with a supporting body which is composed of a semiconductor light emitting element  1  and a supporting body  10 , and a phosphor layer  7  which continuously covers an upper surface and side surfaces of the semiconductor light emitting element  1 , and side surfaces of the supporting body  10 . The phosphor layer  7  is configured such that at least a lower portion of the side surface of the supporting body  10  is thinner than the upper surface and the side surface of the semiconductor light emitting element  1 . Such a configuration of the phosphor layer can be formed by applying a spray-coating of a slurry containing phosphor particles and a thermosetting resin in a solvent on the semiconductor light emitting element  1  side of the light emitting element  20  which has the supporting body.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Japanese Patent Application No.2013-253474, filed on Dec. 6, 2013. The entire disclosure of JapanesePatent Application No. 2013-253474 is hereby incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present disclosure relates to a light emitting device including asemiconductor light emitting element and a wavelength conversion layer,and to a method of manufacturing the same.

2. Description of Related Art

There has been a white diode configured to emit white light by combiningan LED (light emitting diode) to emit blue light and a wavelengthconversion layer (phosphor layer) which absorbs a portion of the bluelight emitted from the LED and converts the light to light of adifferent wavelength such as yellow light, are used in combination sothat white light can be produced by mixing the blue light and the yellowlight.

A method of manufacturing the white light emitting diode includes amethod of applying a resin containing a granular phosphor (wavelengthconversion member) to an LED chip. For example, JP 2012-119673 Adiscloses a method by which many singulated LED chips are arranged apartfrom each other on a carrier substrate having a surface containing anadhesive agent, and a thermosetting resin containing a phosphor isapplied onto an upper surface and a side surface of each of the LEDchips by screen printing using a stencil mask. In addition, JP2012-119673 A discloses a method by which the LED chips are arrangedapart from each other on the carrier substrate, the thermosetting resincontaining the phosphor is applied to the upper surface of each LED chipand between LED chips with a spray device, and singulated intoindividual pieces by dicing after the resin is cured.

Furthermore, JP 2003-69086 A discloses a method by which phosphorparticles are uniformly attached on the LED chip by electrodeposition.That is, according to the method disclosed in JP 2003-69086 A, awavelength conversion layer is formed by electrophoretically attachingthe phosphor particles to the surface of the LED chip.

However, according to the method using the screen printing disclosed inJP 2012-119673 A, it is necessary to align the LED chips arranged on thecarrier substrate with the stencil mask. Thus, if the LED chip is notcorrectly aligned with the stencil mask, it may result in occurrence ofsome regions where the wavelength conversion layer is not formed in theupper surface, and the wavelength conversion layer does not have apredetermined thickness on the side surface, so that uneven distributionof light color may occur. According to the other method, at the time ofdicing the wavelength conversion layer applied to the LED chips, if theposition to be diced is not accurate, the wavelength conversion layerprovided on the side surface does not have a predetermined thickness, sothat a distribution light color becomes uneven.

In addition, according to the method disclosed in JP 2003-69086 A, ithas been difficult to form the wavelength conversion layer on a singleLED chip body. If there can be prepared a supporting substrate of theLED chip having uniform in-plane electric resistance, it istheoretically possible to form a resin layer containing phosphorparticles and having a uniform thickness by the electrodeposition, butit has been difficult to obtain the above supporting substrate. Inaddition, according to the method disclosed in JP 2003-69086 A, it isnecessary to previously give electrical conductivity to an entireexposed surface of the LED chip to be used. Furthermore, according tothe method using the electrophoresis, the element such as the LED chipneeds to be soaked in an organic solvent for a long time, so that thereare many restrictions in materials which can be used, and the methodcannot be applied to various types of elements.

SUMMARY OF THE INVENTION

The present disclosure was made in view of the above problems, and it isan object of the present disclosure to provide a light emitting devicewhich has a wavelength conversion layer made of a resin containing aphosphor, on a surface of a semiconductor light emitting element andwhich can reduce unevenness in distribution light color, and a method ofmanufacturing the light emitting device.

In order to solve the above problems, a light emitting device accordingto the embodiments of the present invention includes a semiconductorlight emitting element, a supporting body for supporting thesemiconductor light emitting element, and a wavelength conversion layerfor continuously covering an upper surface and side surfaces of thesemiconductor light emitting element, and side surfaces of thesupporting body, in which a thickness of the wavelength conversion layerat least at a lower portion of each of the side surfaces of thesupporting body is smaller than a thickness of the wavelength conversionlayer on the upper surface and the side surfaces of the semiconductorlight emitting element.

A method of manufacturing a light emitting device according to theembodiments of the present invention includes forming a supporting bodyon each mounting surface of a plurality of semiconductor light emittingelements, arranging the semiconductor light emitting elements eachhaving the supporting body, spaced apart from each other by apredetermined distance with a side of the supporting body facingdownward, and forming a wavelength conversion layer to continuouslycover an upper surface and side surfaces of the semiconductor lightemitting element having the supporting body, in which the forming thewavelength conversion layer further includes spraying a slurry providedby mixing particles of a wavelength conversion member and athermosetting resin in a solvent onto the upper surface and the sidesurfaces of the semiconductor light emitting element having thesupporting body, to form the wavelength conversion layer with athickness at least at a lower portion of each of the side surfaces ofthe supporting body being smaller than the upper surface and the sidesurfaces of the semiconductor light emitting elements.

In a light emitting device according to the embodiments of the presentinvention, the wavelength conversion layer having the uniform thicknessis formed on the upper surface and the side surfaces serving as a lightextracting surface of the semiconductor light emitting element, and thewavelength conversion layer is not excessively formed at the lowerportion of the side surfaces, so that it is possible to reduce theunevenness in distribution light color. In addition, in a method ofmanufacturing the light emitting device according to the embodiments ofthe present invention, spray coating is performed while elevating thesemiconductor light emitting element with the supporting body, so thatthe wavelength conversion layer having a uniform thickness can be formedon the upper surface and the side surfaces serving as the lightextracting surface of the semiconductor light emitting element.Furthermore, since the wavelength conversion layer at the lowerside-surface portion can be thinly formed, the singulating after theformation of the wavelength conversion layer is not required or can besimply performed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are schematic cross-sectional views each showing aconfiguration of a light emitting device according to a first embodimentof the present invention, in which FIG. 1A shows a case where a growthsubstrate is provided, and FIG. 1B shows a case where the growthsubstrate is not provided.

FIGS. 2A and 2B are schematic views each showing a configuration inwhich the light emitting device according to the first embodiment of thepresent invention is mounted on a mounting substrate, in which FIG. 2Ashows a plan view, and FIG. 2B shows a cross-sectional view taken alonga line A-A in FIG. 2A.

FIG. 3 is a flowchart showing a flow of a method of manufacturing alight emitting device according to the first embodiment of the presentinvention.

FIGS. 4A to 4E are schematic cross-sectional views each showing a partof manufacturing steps in a method of manufacturing a light emittingdevice according to the first embodiment of the present invention, inwhich FIG. 4A shows that light emitting elements are formed, FIG. 4Bshows that a resin layer is formed, FIG. 4C shows that through holes areformed in the resin layer, FIG. 4D shows that conductive members and padelectrode are formed, and FIG. 4E shows that light emitting elements aresingulated.

FIGS. 5A to 5C are schematic cross-sectional views each showing a partof the manufacturing steps in the method of manufacturing the lightemitting device according to the first embodiment of the presentinvention, in which FIG. 5A shows that the singulated light emittingelements with supporting bodies are arranged on a sheet, FIG. 5B showsthat a phosphor layer is formed by spray coating, and FIG. 5C shows thatthe light emitting element is picked up.

FIGS. 6A and 6B are schematic cross-sectional views each showing thephosphor layer formed by using spray coating in a method ofmanufacturing a light emitting element according to the first embodimentof the present invention, in which FIG. 6A shows a case where thesupporting body is provided, and FIG. 6B shows a case where thesupporting body is not provided as a comparison example.

FIG. 7 is a schematic cross-sectional view showing an example of a spraydevice for spraying a slurry containing a resin and granular phosphor,in a method of manufacturing a light emitting device according to thefirst embodiment of the present invention.

FIGS. 8A and 8B are schematic cross-sectional views each showing aconfiguration of a light emitting device according to a variation of thefirst embodiment of the present invention, in which FIG. 8A shows a casewhere a face-up mounting type light emitting element is used, and FIG.8B shows a case where a vertical mounting type light emitting element isused.

FIG. 9 is a schematic cross-sectional view showing a configuration of alight emitting device according to a second embodiment of the presentinvention.

FIG. 10A is a schematic cross-sectional view showing a configuration ofa light emitting element according to a third embodiment of the presentinvention, and FIG. 10B is a schematic cross-sectional view showing aconfiguration of a light emitting element according to a fourthembodiment of the present invention.

FIGS. 11A and 11B are schematic cross-sectional views each showing apart of manufacturing steps in a method of manufacturing the lightemitting device according to the third embodiment of the presentinvention, in which FIG. 11A shows that light emitting elements areformed, and FIG. 11B shows that a resin layer is formed.

DETAILED DESCRIPTION OF EMBODIMENTS

Hereinafter, a description will be given to embodiments of a lightemitting device and a method of manufacturing the light emitting deviceaccording to the present invention. The drawings referenced in thefollowing description schematically show the present invention, anddimensions, distances, and positional relationship of members may beexaggerated, or some members may be omitted in some cases. The scale andthe distance of the members in a plan view may not always coincide withthose in a cross-sectional view. Also, in the following description, thesame name and reference mark show the same or similar member in general,and its detailed description is occasionally omitted.

<First Embodiment>

Configuration of Light Emitting Device

First, a configuration of a light emitting device according to a firstembodiment of the present invention will be described with reference toFIG. 1A. As shown in FIG. 1A, a light emitting device 100 according tothe present embodiment includes a supporting body 10, a semiconductorlight emitting element 1 (hereinafter may be referred to as “lightemitting element”) provided on the supporting body 10, and a phosphorlayer (wavelength conversion layer) 7 which covers an upper surface andside surfaces of the light emitting element 1, and upper side-surfaceportions of the supporting body 10. In the light emitting device 100,light (such as blue light) emitted from the light emitting element 1 ismixed with light (such as yellow light) provided in such a manner thatthe phosphor layer 7 partially absorbs the light emitted from the lightemitting element 1 and converts its wavelength, and the mixed light(such as white light) is emitted from the upper surface and the sidesurfaces of the light emitting device.

The light emitting element 1 is an LED including a growth substrate 2, asemiconductor stacked layer body 3, an n-side electrode 4 n, a p-sideelectrode 4 p, an overall electrode 5 a, a cover electrode 5 b, and aprotective layer 6. The light emitting element 1 according to thepresent embodiment is a face-down mounting type light emitting elementin which one surface of the light emitting element 1 serves as amounting surface on which the semiconductor stacked layer body 3, then-side electrode 4 n, and the p-side electrode 4 p are provided, and theother surface of the light emitting element 1 serves as a lightextracting surface on which the phosphor layer 7 is provided on thegrowth substrate 2.

The supporting body 10 serves as a raising member so that afterdisposing the light emitting element 1 and at the time of applying aspray coating on the upper surface and the side surfaces of the lightemitting element 1 to form the phosphor layer 7, the light emittingelement 1 can be positioned above the placement surface of coatingobject in a spray device to be used. A method of forming the phosphorlayer 7 by spray coating will be described in detail below. The lightemitting device 100 of the present embodiment is mounted on a mountingsubstrate (for example, a mounting substrate 9 in FIGS. 2A and 2B) in astate that the supporting body 10 is loaded with the face-down mountingtype light emitting element 1. For this configuration, the supportingbody 10 is provided with a resin layer 11, conductive members 12 n and12 p, and pad electrodes 13 n and 13 p.

Next, components of the light emitting device 100 will be described indetail. The light emitting element 1 includes the semiconductor stackedlayer body 3 having an n-type semiconductor layer 3 n and a p-typesemiconductor layer 3 p on a lower surface of the growth substrate 2.The semiconductor stacked layer body 3 emits light when a current isapplied thereto, and a light emitting layer 3 a is preferably providedbetween the n-type semiconductor layer 3 n and the p-type semiconductorlayer 3 p.

The semiconductor stacked layer body 3 has a region in which the p-typesemiconductor layer 3 p and the light emitting layer 3 a do not exist,that is, a region recessed from the surface of the p-type semiconductorlayer 3 p (this region is referred to as a “step portion 3 b”) isformed. A bottom surface (lower surface in FIG. 1A) of the step portion3 b is an exposed surface of the n-type semiconductor layer 3 n, and then-side electrode 4 n is formed in the step portion 3 b. In addition, analmost entire upper surface of the p-type semiconductor layer 3 p iscovered with the overall electrode 5 a having favorable reflectivity andthe cover electrode 5 b for covering the overall electrode 5 a. Thep-side electrode 4 p is formed on a part of a lower surface of the coverelectrode 5 b. Surfaces of the semiconductor stacked layer body 3 andthe cover electrode 5 b are covered with the protective layer 6 havinginsulating and light transmissive properties, except for the regions ofthe n-side electrode 4 n and the p-side electrode 4 p which serve as thepad electrodes of the light emitting element 1.

The growth substrate 2 is provided for epitaxially growing thesemiconductor stacked layer body 3. The growth substrate 2 has to beformed of a substrate material which allows of epitaxially growing thesemiconductor stacked layer body 3, and the size, thickness, and thelike of the growth substrate 2 are not limited in particular. In a casewhere the semiconductor stacked layer body 3 is composed of a nitridesemiconductor such as GaN (gallium nitride), examples of the substratematerial include insulating substrates such as sapphire having aprinciple plane of C-plane, R-plane, or A-plane, and spinel (MgAl₂O₄);and silicon carbide (SiC), ZnS, ZnO, Si, GaAs, diamond, and oxidesubstrates such as lithium niobate and neodymium gallate which form alattice junction with a nitride semiconductor.

As described above, the semiconductor stacked layer body 3 has then-type semiconductor layer 3 n and the p-type semiconductor layer 3 pand includes the light emitting layer 3 a. According to the presentembodiment, the step portion 3 b is formed in such a manner that fromone part of the surface of the semiconductor stacked layer body 3, thep-type semiconductor layer 3 p and the light emitting layer 3 a areentirely removed and the n-type semiconductor layer 3 n is partiallyremoved. Then, the n-side electrode 4 n is formed on the bottom surface(lower surface) of the step portion 3 b so as to be electricallyconnected to the n-type semiconductor layer 3 n. Furthermore, a lowersurface of the p-type semiconductor layer 3 p which is a lower surfaceof the semiconductor stacked layer body 3 except for the step portion 3b is provided with stacked electrodes composed of the overall electrode5 a electrically connected to almost the entire surface of the p-typesemiconductor layer 3 p, the cover electrode 5 b which covers a lowersurface and side surfaces of the overall electrode 5 a, and the p-sideelectrode 4 p provided in a part of the lower surface of the coverelectrode 5 b.

The semiconductor stacked layer body 3 may be made of materials suitablefor the semiconductor light emitting element, such as GaN, GaAs, InGaN,AlInGaP, SiC, and ZnO. According to the present embodiment, since thelight emitted from the light emitting element 1 is partially convertedto light of a different wavelength by the phosphor layer 7, thesemiconductor stacked layer body 3 preferably emits blue light or purplelight having a short emission wavelength.

The n-type semiconductor layer 3 n, the light emitting layer 3 a, andthe p-type semiconductor layer 3 p may be preferably made of a GaN-basedcompound semiconductor such as InXAlYGa1-X—YN (0≦X, 0≦Y, X+Y≦1). Each ofthe above semiconductor layers may have a single-layer structure, alaminated structure composed of layers each having a differentcomposition and a different thickness, or a superlattice structure.Especially, the light emitting layer 3 a preferably has a single quantumwell or multiple quantum well structure in which thin films each havinga quantum effect are stacked.

In the case where the semiconductor stacked layer body 3 is made of theGaN-based compound semiconductor, the semiconductor stacked layer body 3can be formed by a known technique such as MOCVD (metalorganic chemicalvapor deposition) method, HYPE (hydride vapor phase epitaxy) method, orMBE (molecular beam epitaxy) method. Furthermore, a thickness of thesemiconductor layer is not limited in particular, and variousthicknesses may be applied.

The overall electrode 5 a is provided so as to cover almost the entirelower surface of the p-type semiconductor layer 3 p. The cover electrode5 b is provided so as to cover the entire lower surface and the entireside surfaces of the overall electrode 5 a. The overall electrode 5 aserves as a conductor layer for uniformly diffusing a current suppliedfrom the cover electrode 5 b and the p-side electrode 4 p provided onthe part of the lower surface of the cover electrode 5 b, to the entiresurface of the p-type semiconductor layer 3 p. In addition, the overallelectrode 5 a also functions as a reflective film which has favorablereflectivity to reflect the light emitted from the light emittingelement 1 upward, that is, toward the light extracting surface. Here,the term “favorable reflectivity” means that the light emitted from thelight emitting element 1 can be preferably reflected. Furthermore, it ispreferable that the overall electrode 5 a has the favorable reflectivityalso for the light of the wavelength converted by the phosphor layer 7.

The overall electrode 5 a may be made of a metal material havingpreferable conductivity and reflectivity. For the metal material havingthe favorable reflectivity in a visible light region, Ag, Al, or analloy containing the above metal as a main component may be preferablyused. In addition, the overall electrode 5 a may be composed of a singlelayer or stacked layers of the above metal materials.

Furthermore, the cover electrode 5 b serves as a barrier layer forpreventing migration of the metal material constituting the overallelectrode 5 a. Particularly, in the case where the overall electrode 5 ais made of Ag in which migration can easily occur, the cover electrode 5b is preferably provided. The cover electrode 5 b may be made of a metalmaterial having favorable conductivity and barrier properties, such asAl, Ti, W, or Au. In addition, the cover electrode 5 b may be composedof a single layer or stacked layers of the above metal materials.

The n-side electrode 4 n is provided on the bottom surface, where then-type semiconductor layer 3 n is exposed, of the step portion 3 b ofthe semiconductor stacked layer body 3. In addition, the p-sideelectrode 4 p is provided on a part of the lower surface of the coverelectrode 5 b. The n-side electrode 4 n is electrically connected to then-type semiconductor layer 3 n, and the p-side electrode 4 p iselectrically connected to the p-type semiconductor layer 3 p through thecover electrode 5 b and the overall electrode 5 a. The n-side electrode4 n and the p-side electrode 4 p serve as the pad electrodes forsupplying external current to the light emitting element 1.

For the n-side electrode 4 n and the p-side electrode 4 p, a metalmaterial can be used. For example, a single metal such as Ag, Al, Ni,Rh, Au, Cu, Ti, Pt, Pd, Mo, Cr, or W, or an alloy or the like of thosemetals can be preferably used. In addition, each of the n-side electrode4 n and the p-side electrode 4 p may be composed of a single layer orstacked layers of the above metal materials.

The protective layer 6 has insulating and light transmissive propertiesand covers the entire surface of the light emitting element 1 except forthe growth substrate 2, and the portions of the n-side electrode 4 n andthe p-side electrode 4 p which to be connected to the outside. Theprotective layer 6 serves as a protective film and an antistatic film ofthe light emitting element 1. In addition, since the protective layer 6covers the side surfaces of the semiconductor stacked layer body 3 fromwhich the light is extracted, the protective layer 6 preferably hasfavorable light transmissive properties to the light of the wavelengthemitted from the light emitting element 1. Furthermore, it is preferablethat the protective layer 6 has favorable light transmissive propertiesalso to the light of the wavelength converted by the phosphor layer 7.

The protective layer 6 may be made of a metal oxide or metal nitride,such as an oxide or nitride of at least one element selected from thegroup consisting of Si, Ti, Zr, Nb, Ta, and Al.

The phosphor layer (wavelength conversion layer) 7 is composed of aresin containing a granular phosphor (wavelength conversion member), andserves as a wavelength conversion layer which partially or entirelyabsorbs the light emitted from the light emitting element 1, and emitslight having a wavelength different from the wavelength of the lightemitted from the light emitting element 1. In the example shown in FIG.1A, with the light emitting device 100 mounted in a face-down manner,the phosphor layer 7 is provided so as to cover the entire upper surfaceof the light emitting element 1 (that is, the upper surface of thegrowth substrate 2), the entire side surfaces of the light emittingelement 1 (that is, the side surfaces of the growth substrate 2 and theside surfaces of the semiconductor stacked layer body 3 covered with theprotective layer 6), and the upper side-surface portions of thesupporting body 10. Marks HA to HE shown in FIG. 1A represent positions(heights) of the light emitting device 100 in the thickness direction.Marks HA to HE in FIGS. 1B, 6A, and 8A to 10B also represent positionsin the thickness direction.

An upper surface portion 7 a of the phosphor layer 7 provided on theupper surface of the light emitting element 1 is formed with almost auniform thickness. Of each side surface portion 7 b of the phosphorlayer 7 provided on the side surfaces of the light emitting element 1and the side surfaces of the supporting body 10, an upper side-surfaceportion 7 b 1 continuously provided from the position HA at an upper endof the light emitting element 1 to the position HC at the middle of thesupporting body 10 is formed so as to have the almost a uniformthickness. The thickness of the upper side-surface portion 7 b 1 ispreferably approximate to the thickness of the upper surface portion 7a, but the thickness of the upper side-surface portion 7 b 1 may besmaller than that of the upper surface portion 7 a. For example, in acase where the thickness of the upper surface portion 7 a is 60 μm, thethickness of the upper side-surface portion 7 b 1 may be 10 μm to 40 μm.

Whereas, a lower side-surface portion 7 b 2 provided from the positionHC described above to the position HD at a middle of the supporting body10, the thickness is gradually reduced from the position HC at the upperend of the lower side-surface portion 7 b 2 toward the position HD atthe lower end of the lower side-surface portion 7 b 2. Here, on eachside surface of the light emitting element 1, the upper side-surfaceportion 7 b 1 having an almost uniform thickness is preferably formed atleast on the portions for emitting light, that is, the side surface ofthe growth substrate 2 and the side surface of the semiconductor stackedlayer body 3.

In an example shown in FIG. 1A, the upper side-surface portion 7 b 1 ispreferably provided on each side surface of the light emitting element1, extending from the position HA at the upper end of the light emittingelement 1 to the HB at a lower end of the semiconductor stacked layerbody 3, that is, a lower end of a light emission surface. In addition,in order to prevent emission color of the phosphor occurring fromunnecessarily wide range of the lower side-surface portion 7 b 2 of thephosphor layer 7 of the light emitting device 100, the position HC atthe lower end of the upper side-surface portion 7 b 1 is preferablyclose to the position HB. With this arrangement, the chromaticitydistribution of the mixed light emitted from the side surface portions 7b provided on the side surfaces of the light emitting device 100 can bemade substantially uniform.

In addition, the position HD at the lower end of each lower side-surfaceportion 7 b 2 is preferably either substantially the same as or higherthan the position HE at a lower end of the resin layer 11 of thesupporting body 10. With this arrangement, emission from a lower portionof the light emitting device 100 which is due to light propagatingthrough the phosphor layer 7 and reaching the end portions of the lightemitting device 100 can be reduced. In addition, preferably, the lowerside-surface portion 7 b 2 is formed into a tapered shape in which thethickness is gradually reduced downwardly, and more preferably, thetapered shape is provided such that the lower end position HD has athickness of “0”. Thus, due to the tapered shape, even when anothermember or a jig touches an edge portion of the phosphor layer 7 whilethe light emitting device 100 is handled in a manufacturing process, thephosphor layer 7 can be formed so as not likely to be removed from thesupporting body 10 and the light emitting element 1. Furthermore, inaddition to arrange the position HD at the lower end of the lowerside-surface portion 7 b 2 higher than the position HE, the lowerside-surface portion 7 b 2 is formed thinner than the upper side-surfaceportion 7 b 1. Thus, it becomes possible to prevent the light having theemission color of the phosphor from being intensely emitted, from thelower side-surface portion 7 b 2 due to the excess phosphor layer 7.

The thickness of each of the upper surface portion 7 a and the upperside-surface portion 7 b 1 of the phosphor layer 7 can be determined bya content of the phosphor, a desired color tone of the mixed color ofthe light emitted from the light emitting element 1 and the light havingthe converted wavelength, and the like. For example, the thickness ofeach of the upper surface portion 7 a and upper side-surface portion 7 b1 of the phosphor layer 7 may be 1 μm to 500 μm, preferably 5 μm to 200μm, and more preferably 10 μm to 100 μm.

The content of the phosphor in the phosphor layer 7 is preferablyadjusted to 0.1 mg/cm² to 50 mg/cm² in mass per unit area. With thecontent of the phosphor within this range, the color conversion can besufficiently implemented.

A resin material preferably has favorable light transmissive propertiesfor the light emitted from the light emitting element 1 and the light ofthe wavelength converted by a phosphor in the phosphor layer 7.Furthermore, according to the present embodiment, the resin material ispreferably a thermosetting resin so that the phosphor layer 7 can beformed in such a manner that a slurry is prepared by mixing a solvent,the resin, and the granular phosphor and the prepared slurry is appliedwith spray, then the applied resin is cured by heating to obtain thephosphor layer 7.

Examples of such a resin material include a silicone resin, a modifiedsilicone resin, an epoxy resin, a modified epoxy resin, a urea resin, aphenol resin, an acrylate resin, a urethane resin, a fluorine resin, aresin containing at least one kind of those resins, or a hybrid resin,and which can be preferably used.

The phosphor (wavelength conversion member) is not limited in particularas long as it can be excited by light of the wavelength emitted from thelight emitting element 1 and emits fluorescent light of the wavelengthdifferent from that of the exciting light, and the granular phosphor ispreferably used. Since the granular phosphor has light diffusing andlight reflecting properties, the phosphor can also function as a lightdiffusion member in addition to the wavelength converting member, sothat the phosphor has an effect of diffusing the light. It is preferablethat the phosphor is roughly uniformly mixed in the phosphor layer 7serving as the resin layer. In addition, as for the phosphor in thephosphor layer 7, two or more kinds may be uniformly mixed, or may bedistributed so as to have a multilayer structure. Furthermore, thephosphor preferably has an average diameter of 2.5 μm to 30 μm measuredby Fisher Sub Sieve Sizer (F. S. S. S.) method so that the slurrycontaining the solvent and the thermosetting resin with the phosphor canbe sprayed.

As the phosphor material, a known material in the art may be used.Examples of the phosphor material include a YAG (yttrium aluminumgarnet)-based phosphor activated by Ce (cerium), a LAG (lutetiumaluminum garnet)-based phosphor activated by Ce, a nitrogen-containingcalcium aluminosilicate (CaO—Al₂O₃—SiO₂)-based phosphor activated by Eu(europium) and/or Cr (chromium), a silicate ((Sr, Ba)₂SiO₄)-basedphosphor activated by Eu, a β sialon phosphor, and a KSF(K₂SiF₆:Mn)-based phosphor. In addition, a quantum dot phosphor may bealso used. In addition, an LED having high efficiency can be obtained bycombining a blue-light emitting element and a yellow-light emittingphosphor, and combining a blue-green-light emitting element and ared-light emitting phosphor. An LED having high color reproducibilitycan be obtained by combining the blue-light emitting element, agreen-light emitting phosphor, and the red-light emitting phosphor. AnLED having high color rendering properties can be obtained by combiningthe blue-light emitting element, the yellow-light emitting phosphor, andthe red-light emitting phosphor.

In addition, a binding material to bind a phosphor to a phosphor ispreferably added to the above phosphor material. As the bindingmaterial, for example, light transmissive inorganic materials such asSiO₂, Al₂O₃, and MSiO (M is Zn, Ca, Mg, Ba, Sr, Zr, or Y) may be used.

Furthermore, in order to adjust viscosity at the time of spraying or togive the light diffusing properties to the phosphor layer 7, aninorganic filler may be added. The inorganic filler may be composed oflight transmissive inorganic compound particles of oxide, carbonate,sulfate, or nitride of elements such as Si, Al, Zn, Ca, Mg, or rareearth element such as Y, or Zr or Ti, or composite salt such asbentonite or potassium titanate. The average particle diameter of theinorganic filler may be in a similar range as the above range of theaverage particle diameter of the phosphor.

In addition, an inorganic material ratio which is a total content ratioof the phosphor particles and the inorganic filler particles in thephosphor layer 7 formed of the resin is defined by the followingequation.Inorganic material ratio=(phosphor mass+inorganic filler mass)/(phosphormass+inorganic filler mass+resin mass)

This inorganic material ratio is not specifically limited, but when theinorganic material ratio is set to be preferably 30% by mass or more,more preferably 50% by mass or more, and still more preferably 60% bymass or more, enough amounts of the phosphor and/or the inorganic fillercan be provided to convert the wavelength and/or to diffuse the light.In addition, when the inorganic material ratio is set to be preferably99% by mass or less, more preferably 90% by mass or less, and sill morepreferably 85% by mass or less, the resin contained in the phosphorlayer 7 can bond the inorganic materials to each other, and bond theinorganic material to the light emitting element 20 with the supportingbody, with enough strength.

As described above, the supporting body 10 is provided under the lightemitting element 1 to increase the height of the light emitting element1 when the phosphor layer 7 is sprayed by the spray device to the uppersurface and the side surfaces of the light emitting element 1. Thesupporting body 10 in the present embodiment includes the resin layer11, the conductive members 12 n and 12 p, and the pad electrodes 13 nand 13 p. The face-down mounting type light emitting element 1 isprovided in such a manner that the surface having the semiconductorstacked layer body 3, the n-side electrode 4 n, and the p-side electrode4 p is opposed to the upper surface of the supporting body 10 so thatthe n-side electrode 4 n is electrically connected to the conductivemember 12 n, and the p-side electrode 4 p is electrically connected tothe conductive member 12. The supporting body 10 in the presentembodiment is formed into substantially the same shape of the lightemitting element 1 in a plan view.

An outline shape of the supporting body 10 is preferably the same as anoutline shape of the light emitting element 1, or smaller than theoutline shape of the light emitting element 1 so as to be positioned atan inner side in the plan view. It is especially preferable that thewhole of the supporting body 10 is positioned inside the outline of thelight emitting element 1 in the plan view. In addition, a thickness ofthe supporting body 10 is preferably equal to or larger than a thicknessof the phosphor layer 7, and the thickness of the supporting body 10 canbe 20 μm to 200 μm, and preferably 50 μm to 100 μm. Since the supportingbody 10 has the above shape, when the phosphor layer 7 is formed byspray coating, the side surface portion 7 b of the phosphor layer 7formed on the side surface of the supporting body 10 can become shortand/or thin downwardly.

The resin layer 11 serves as a body of the supporting body 10 toincrease the height of the light emitting element 1. The conductivemembers 12 n and 12 p are provided in the resin layer 11 so as topenetrate the resin layer 11 in a thickness direction. The resin layer11 in the present embodiment may be formed of an insulating resin, forexample, thermosetting resins such as a phenol resin composition, athermosetting polyimide resin composition, a urea resin composition, asilicone resin composition, an epoxy resin composition, or a hybridresin of these can be preferably used. More favorable examples of theinsulating resin can include a resist resin composition which is used inphotolithography and contains a silicone resin or epoxy resin superiorin heat resistance and light resistance as a base resin, and a moldingresin composition used in various kinds of molding processes. Aninorganic filler may be added to the above resin composition to increasereflectivity and mechanical strength or to reduce a linear expansioncoefficient. The linear expansion coefficient of the resin compositionis preferably 30 ppm or less. In the present embodiment, the resin layer11 is used as the body of the supporting body 10, but glass or otherinorganic materials may be used instead of the resin material.

The resin layer 11 preferably has favorable light reflectivity for thelight of the wavelength emitted from the light emitting element 1. Inthis case, a light reflective inorganic filler is added to the resinlayer 11. In addition, the resin material for the resin layer 11preferably has favorable translucency for the light of the wavelengthemitted from the light emitting element 1. Thus, the resin layer 11functions as a reflecting film, so that the resin layer 11 can reflectthe light which has been leaked from the lower surface of the lightemitting element 1, and return the light to the light emitting element1. As a result, efficiency of light extraction from the light extractingsurface can be improved. The inorganic filler may be the same as thelight diffusing inorganic filler to be contained in the phosphor layer7.

The conductive member 12 n is provided so as to penetrate the resinlayer 11 in the thickness direction so that its upper end iselectrically connected to the n-side electrode 4 n, and its lower end iselectrically connected to the pad electrode 13 n to be connected to amounting substrate (refer to the mounting substrate 9 in FIGS. 2A and2B, for example). In addition, the conductive member 12 p is provided soas to penetrate the resin layer 11 in the thickness direction so thatits upper end is electrically connected to the p-side electrode 4 p, andits lower end is electrically connected to the pad electrode 13 p to beconnected to the mounting substrate. Each of the conductive members 12 nand 12 p is preferably made of metal having high electric conductivitysuch as Au, Cu, Ag, or Al, or an alloy mainly composed of the abovemetals.

The pad electrodes 13 n and 13 p are to be electrically connected to theelectrodes of the mounting substrate when the light emitting device 100is mounted on the mounting substrate. The pad electrode 13 n iselectrically connected to the lower end of the conductive member 12 n,and the pad electrode 13 p is electrically connected to the lower end ofthe conductive member 12 p. The pad electrodes 13 n and 13 p serve as anegative electrode and a positive electrode of the light emitting device100, respectively. Each of the pad electrodes 13 n and 13 p ispreferably made of Au, or an alloy mainly composed of Au which is highin electric conductivity and superior in corrosion resistance.

In the present embodiment, the pad electrodes 13 n and 13 p are formedto be wider than the conductive members 12 n and 12 p in the plan view,respectively, but the pad electrodes 13 n and 13 p may be formed to bethe same or narrower. In addition, according to the present embodiment,lower surfaces of the pad electrodes 13 n and 13 p project downward froma lower surface of the resin layer 11, but instead of this, the padelectrodes 13 n and 13 p may be formed so as to be buried in the resinlayer 11. In addition, the conductive members 12 n and 12 p may be usedas the pad electrodes without providing the pad electrodes 13 n and 13p.

<Variation of Light Emitting Device>

Next, a light emitting device according to a variation of the firstembodiment of the present invention will be described with reference toFIG. 1B. A light emitting device 100A according to the variation of thefirst embodiment shown in FIG. 1B differs from the light emitting device100 shown in FIG. 1A in that a light emitting element 1A not having thegrowth substrate 2 is provided instead of the light emitting element 1.The other configuration of the light emitting device 100A is the same asthat of the light emitting device 100, so that the same component ismarked with the same reference and a detailed description is omitted.

In the light emitting device 100A in this variation, similar to thelight emitting device 100, the light emitting element 1A is providedsuch that a surface having the n-side electrode 4 n and the p-sideelectrode 4 p is opposed to the supporting body 10. The upperside-surface portion 7 b 1 of the phosphor layer 7 is provided such thatthe position HC at the lower end of the upper side-surface portion 7 b 1is the same as the position HB, that is, the lower end of thesemiconductor stacked layer body 3, or lower than the position HB at thelower end of the light emission surface in the side surface of the lightemitting element 1A. The lower side-surface portion 7 b 2 of thephosphor layer 7 is provided such that the lower side-surface portion 7b 2 becomes thinner downwardly, and the position HD at the lower end ofthe lower side-surface portion 7 b 2 is the same as the position HE orhigher than the position HE at the lower end of the resin layer 11 ofthe supporting body 10.

<Light Emitting Device with Mounting Substrate>

Next, a description will be given to a light emitting device with themounting substrate provided after the above light emitting devices 100have been mounted on the mounting substrate, with reference to FIGS. 2Aand 2B. As shown in FIGS. 2A and 2B, a light emitting device 110 withthe mounting substrate is provided after the plurality of the lightemitting devices 100 have been mounted on the mounting substrate 9. Thenumber of the light emitting devices 100 to be mounted on the mountingsubstrate 9 is not specifically limited, and at least one of the lightemitting devices may be mounted. The light emitting device to be mountedis not limited to the light emitting device 100 shown in FIG. 1A, andthe light emitting device 100A shown in FIG. 1B may be mounted insteadof the light emitting device 100.

The example shown in FIG. 2A schematically and selectively shows aregion in which the three light emitting devices 100 are to be mounted.In addition, the example shows a case where the light emitting device100 is mounted in one mounting region 94 provided in a center among thethree mounting regions 94.

As shown in FIG. 2A, the mounting substrate 9 is provided in such amanner that a negative side wiring electrode 92 n and a positive sidewiring electrode 92 p each having a comb-like shape are provided on aninsulating supporting substrate 91 so that their tooth portions in thecomb-like shapes are opposed to each other in a plan view. The mountingregion 94 for mounting the one light emitting device 100 includes onepair of tooth portions in the comb-like shapes of the negative sidewiring electrode 92 n and the positive side wiring electrode 92 p.

A negative electrode connection layer 93 n and a positive electrodeconnection layer 93 p are provided in the mounting region 94 as solderlayers to be connected to the n-side electrode 4 n and the p-sideelectrode 4 p of the light emitting device 100, respectively. Thenegative electrode connection layer 93 n and the positive electrodeconnection layer 93 p are melted by a reflow technique, and connect then-side electrode 4 n to the negative side wiring electrode 92 n, and thep-side electrode 4 p to the positive side wiring electrode 92 p,respectively. In addition, each of the negative side wiring electrode 92n and positive side wiring electrode 92 p is connected to a feedingterminal, and supplied with a power from an external power supplythrough the feeding terminal.

In addition, right and left upper surface regions of the mountingsubstrate 9 except for the mounting region 94 are each covered with aninsulating reflecting layer 95. According to the example shown in FIGS.2A and 2B, the reflecting layer 95 only covers the right and left sidesof the mounting region 94, but the reflecting layer 95 may further covera region except for the regions of the negative electrode connectionlayer 93 n and the positive electrode connection layer 93 p.

The reflecting layer 95 has favorable reflectivity for the light of thewavelength emitted from the light emitting element 1 and the light ofthe wavelength emitted from the phosphor layer 7. The reflecting layer95 may be made of the same material as that of the above reflectingresin layer 11. That is, the reflecting layer 95 can be formed byapplying the resin containing the light reflective inorganic filler.

In the light emitting device 110 with the mounting substrate in thepresent invention, the light emitting devices 100 may be sealed with alight transmissive sealing member as a whole. The sealing member may bemade of the resin material used for the phosphor layer 7 and thereflecting layer 95, or an inorganic material such as glass or silicagel. Furthermore, a light diffusion member may be added to the sealingmember. With this configuration, the light emitted from the lightemitting element 1 can be favorably mixed with the light emitted fromthe phosphor layer 7. As the light diffusion member, the same member asthat shown as the light reflecting member of the reflecting layer 95 maybe used.

Furthermore, the light emitting device 100 according to the presentembodiment, is not only limited to that employing a combination of bluelight and yellow light, but also to employ a combination of lightemitted from a light emitting element and light which is created by aphosphor layer 7 absorbing a portion of light emitted from the lightemitting element and converting into light of a different wavelength.For example, the light emitting element 1 may emit blue light, and thephosphor layer 7 may convert the blue light to red light and/or greenlight, or the light emitting element 1 may emit ultraviolet light, andthe phosphor layer 7 may convert the ultraviolet light to light of alonger wavelength such as blue light, green light, yellow light, or redlight.

Operation of Light Emitting Device

Next, an operation of the light emitting device 110 with the mountingsubstrate will be described with reference to FIGS. 2A and 2B (refer toFIG. 1A occasionally). The description will be given assuming that thelight emitting element 1 emits blue light, and the phosphor layer 7emits yellow light, for convenience of the description.

In the light emitting device 110 with the mounting substrate shown inFIGS. 2A and 2B, when the external power supply is connected to thefeeding terminals provided in the mounting substrate 9, a current issupplied between the p-side electrode 4 p and the n-side electrode 4 nof the light emitting element 1 through the positive side wiringelectrode 92 p and the negative side wiring electrode 92 n, theconnection layer for positive electrode 93 p and the connection layerfor negative electrode 93 n, and through the pad electrode 13 p, the padelectrode 13 n, the conductive member 12 p, and the conductive member 12n of the light emitting device 100. Thus, when the current is suppliedbetween the p-side electrode 4 p and the n-side electrode 4 n, the lightemitting layer 3 a of the light emitting element 1 emits blue light.

The blue light emitted from the light emitting layer 3 a of the lightemitting element 1 transmits in the semiconductor stacked layer body 3and the growth substrate 2. This light is outputted from the uppersurface or the side surface of the light emitting element 1, andpartially absorbed by the phosphor particles in the phosphor layer 7,converted to yellow light, and externally extracted. In addition, theblue light partially passes through the phosphor layer 7 without beingabsorbed by the phosphor, and externally extracted. The lighttransmitted downward in the light emitting element 1 is reflected upwardby the overall electrode 5 a, and outputted from the upper surface orthe side surface of the light emitting element 1. Thus, the yellow lightand the blue light are externally extracted from the light emittingdevice 100 and mixed with each other, and then white light is generated.The light extracted from the side surface of the light emitting device100 in a downward direction is reflected upward by the reflecting layer95 and outputted from the light emitting device 110. The light emittingdevice 100A is the same as the light emitting device 100 in theconfiguration except that the blue light emitted from the upper surfaceof the semiconductor stacked layer body 3 is directly inputted to thephosphor layer 7. Thus, the description is omitted.

Method of Manufacturing Light Emitting Device

Next, a method of manufacturing the light emitting device 110 shown inFIGS. 2A and 2B will be described with reference to FIG. 3. As shown inFIG. 3, the method of manufacturing the light emitting device 110includes a light emitting element preparing step S11, a supporting bodyforming step S12, a singulating step S13, a light emitting elementselecting step S14, a light emitting element arranging step S15, aphosphor layer forming step (wavelength conversion layer forming step)S16, and a mounting step S17, and those steps are executed in thisorder. Hereinafter, each step will be described in detail with referenceto FIGS. 4A to 5C (refer to FIGS. 1A to 3, occasionally). In each of theFIGS. 4A to 5C, some detailed components (such as the protective layer6, and the laminated structure of the semiconductor stacked layer body3) in the light emitting element 1 are omitted for ease of illustration.

The light emitting element preparing step S11 is performed to preparethe light emitting element 1 having the configuration shown in FIG. 1A.According to the light emitting element preparing step S11 in thepresent embodiment, a wafer is formed such that the plurality of thelight emitting elements 1 are arranged on the one growth substrate 2.

More specifically, the semiconductor stacked layer body 3 is formed ofthe above-described semiconductor material by sequentially laminatingthe n-type semiconductor layer 3 n, the light emitting layer 3 a, andthe p-type semiconductor layer 3 p, on the growth substrate 2 (on thelower surface in FIGS. 1A and 1B) composed of sapphire or the like.After the semiconductor stacked layer body 3 has been formed, the stepportion 3 b in which the n-type semiconductor layer 3 n is exposed inthe bottom surface is formed by removing the p-type semiconductor layer3 p, the light emitting layer 3 a, and one part of the n-typesemiconductor layer 3 n by etching from the one portion of the surface(on the lower surface in FIGS. 1A and 1B) of the semiconductor stackedlayer body 3. Then, the n-side electrode 4 n serving as the padelectrode is formed on the bottom surface of the step portion 3 b. Inaddition, the region serving as the light emitting region having thep-type semiconductor layer 3 p and the light emitting layer 3 a iscovered with the reflective overall electrode 5 a formed to cover almostthe entire lower surface of the p-type semiconductor layer 3 p, thecover electrode 5 b is formed to cover the surface of the overallelectrode 5 a, and the p-side electrode 4 p serving as the pad electrodeis formed in the one portion of the lower surface of the cover electrode5 b. Furthermore, the insulating SiO2 protective layer 6 is formed onthe entire surface of a wafer except for the n-side electrode 4 n andthe p-side electrode 4 p, by sputtering, for example. As a result, asshown in FIG. 4A, the light emitting elements 1 are formed on the wafer.

Subsequently, in the supporting body forming step S12, the supportingbody 10 is formed on the wafer. This step is composed of three sub stepsas shown in FIGS. 4B to 4D.

(Resin Layer Forming Step)

In a resin layer forming step serving as a first sub step, as shown inFIG. 4B, the resin layer 11 serving as a base of the supporting body 10is formed on an entire surface of the wafer. The resin layer 11 can beformed by spray coating, spin coating, or casting. The resin layer 11may be made of the above-described resin material such as polyimide. Theresin material for the resin layer 11 is preferably a photosensitiveresin such as photosensitive polyimide. With this, in a next second substep, through holes 11 n and 11 p can be formed in the resin layer 11 bya photo process.

(Through Hole Forming Step)

In a through hole forming step serving as the second sub step, as shownin FIG. 4C, the through holes 11 n and 11 p are formed in the resinlayer 11 which has been formed in the resin layer forming step. Thethrough holes 11 n and 11 p are formed so as to expose the n-sideelectrode 4 n and the p-side electrode 4 p, respectively. As descriedabove, the through holes 11 n and 11 p can be formed by the photoprocess when the resin layer 11 is made of the photosensitive resin.That is, with a mask having openings in regions just above the n-sideelectrode 4 n and the p-side electrode 4 p, the upper surface of theresin layer 11 is exposed to light from above, and then, unexposedportions are developed and removed, whereby the through holes 11 n and11 p are formed. In addition, in a case where the resin layer 11 isnegatively developed, the regions corresponding to the through holes 11n and 11 p are to be exposed. In a case where the resin layer 11 is nota photosensitive layer, the through holes 11 n and 11 p can be formed byphotolithography using a mask and etching.

(Conductive Member Forming Step)

In a conductive member forming step serving as a third sub step, asshown in FIG. 4D, conductive members 12 n and 12 p are formed in thethrough holes 11 n and 11 p which have been formed in the through holeforming step, and the pad electrodes 13 n and 13 p are formed on theupper surfaces of the conductive members 12 n and 12 p, respectively.The conductive members 12 n and 12 p and the pad electrodes 13 n and 13p may be formed by electrolytic plating. In this case, first, a seedlayer is formed of a metal material (such as Ni or Au) on an entiresurface of the resin layer 11 including inner surfaces of the throughholes 11 n and 11 p by sputtering. Then, the electrolytic plating isperformed with the seed layer used as one electrode, so that metal (suchas Cu) layers can be laminated on the surface of the resin layer 11including the inner surfaces of the through holes 11 n and 11 p. Thus,the metal in the through holes 11 n and 11 p serve as the conductivemembers 12 n and 12 p.

Subsequently, the unnecessary metal layer laminated on the upper surfaceof the resin layer 11 is removed together with an upper portion of theresin layer 11 by cutting or polishing. Thus, the supporting body 10 isformed such that the upper surface of the resin layer 11 and the uppersurfaces of the conductive members 12 n and 12 p are flush with oneanother. In the case where the pad electrodes 13 n and 13 p are formed,a resist mask having openings in regions corresponding to the padelectrodes 13 n and 13 p is subsequently formed on the upper surface ofthe supporting body 10, and then a metal layer is formed by sputteringor electrolytic plating. After that, the resist mask and the metal layerlaminated on an upper surface thereof are removed, whereby the padelectrodes 13 n and 13 p are formed.

In a case where the pad electrode 13 n and 13 p are formed into the sameshape as those of the conductive members 12 n and 12 p in the plan view,following the electrolytic plating for forming the conductive members 12n and 12 p, a plating solution is exchanged, and the metal layer (suchas Au) may be similarly formed so as to be laminated as the padelectrodes 13 n and 13 p. In the case where the pad electrodes 13 n and13 p are continuously formed by the electrolytic plating after theconductive members 12 n and 12 p have been formed, a total thickness ofthe conductive member 12 n or 12 p and the pad electrode 13 n or 13 p ismade to be smaller than a thickness of the resin layer 11. As describedabove, since the upper portion of the resin layer 11 is cut and removedso as to expose the pad electrodes 13 n and 13 p, the supporting body 10is formed such that the upper surfaces of the pad electrodes 13 n and 13p and the upper surface of the resin layer 11 are flush with oneanother.

In the above example, when the conductive members 12 n and 12 p areformed by electrolytic plating, the resist mask is used to determine theshapes of the conductive members 12 n and 12 p, and left and used as theresin layer 11, but the resin layer 11 may be formed of other resinmaterials. For example, after the conductive members 12 n and 12 p havebeen grown by a wet process such as electrolytic plating, or a dryprocess such as sputtering, the resist mask may be removed, and theresin layer 11 may be formed of an EMC (epoxy molding compound) or SMC(silicone molding compound). Thus, the resin having a required functioncan be selected.

Specifically, in the case where the conductive members 12 n and 12 p areformed by electrolytic plating, the resist mask is formed of an acrylicresin based resist material, and the resist mask is removed after theelectrolytic plating. The resin layer 11 is formed of an epoxy resincomposition containing a white filler such as titanium oxide bycompression molding or transfer molding, so that the supporting body 10can be a highly reflective body.

Subsequently, in the singulating step S13, the light emitting elements 1formed on the supporting body 10, that is, the light emitting elements20 with the supporting body are singulated along cut lines X shown bybroken lines, as shown in FIG. 4E.

The light emitting elements 20 with the supporting body in the waferstate may be cut by dicing or scribing. Before the wafer is cut, a backsurface of the growth substrate 2 may be polished and thinned, or agroove may be formed in a thickness direction of the resin layer 11along the cut lines X. This groove can be formed in the same way as thethrough hole formed in the through hole forming step. Thus, the lightemitting elements 20 with the supporting body in the wafer state can beeasily cut.

In the case where the light emitting device 100A shown in FIG. 1B isused as the light emitting device, after the supporting body 10 has beenformed, the growth substrate 2 is removed by a LLO (laser liftoff)process or chemical liftoff process, and then the singulating step S13is performed. After the growth substrate 2 has been removed, the uppersurface of the semiconductor stacked layer body 3 may be polished andthen the upper surface of the semiconductor stacked layer body 3 may beroughened by wet etching to have an uneven surface. Thus, the lightextracting efficiency from the light emitting device 100A can beimproved.

Subsequently, in the light emitting element selecting step S14, the onehaving predetermined range of light emission characteristics is selectedfrom the light emitting elements 20 with supporting bodies which havebeen singulated in the singulating step S13. Here, the predeterminedrange of light emission characteristics means a center wavelength and/orlight emission intensity of the light emitted from the light emittingelement 1. By selecting the light emitting element 20 with thesupporting body having the similar light emission characteristics, thephosphor layer 7 can be formed with high uniformity in the phosphorlayer forming step S16 which will be described below, and in addition,the color tone can be prevented from varying among the manufacturedlight emitting devices 100.

Subsequently, in the light emitting element arranging step S15, as shownin FIG. 5A, the light emitting elements 20 with the supporting bodiesselected in the light emitting element selecting step S14 are arrangedapart from each other with their side surfaces exposed, on a sheet (orjig substrate) 40 having an adhesive surface. At this time, the lightemitting element 20 with the supporting body is arranged so that thesurface having the supporting body 10 faces downward, that is, thesurface having the pad electrodes 13 n and 13 p is opposed to the sheet40. The sheet 40 may be a dicing sheet of a semiconductor wafer made ofa resin such as vinyl chloride. For example, the dicing tape V-8-Smanufactured by NITTO DENKO CORPORATION may be used.

As for the sheet 40, a UV (ultraviolet)-curing type resin may be formedas an adhesive agent on the surface on which the light emitting element1 is set. In the mounting step S17 which will be described below, theadhesive resin is cured by irradiating the sheet 40 with UV light sothat the adhesiveness can disappear. In this way, with a collet 50 and apin 51 (refer to FIG. 5C), for example, the light emitting element 20with the supporting body and the phosphor layer 7, that is, the lightemitting device 100 can be easily removed from the sheet 40.

Subsequently, in the phosphor layer forming step (wavelength conversionlayer forming step) S16, as shown in FIG. 5B, the phosphor layer 7 isformed by injecting a spray SP of a slurry as a raw material of thephosphor layer 7 from a spray device 30 onto the sheet 40 on which thelight emitting elements 20 with the supporting bodies are arranged. Inthe present embodiment, the sprayed phosphor layer 7 is heated by aheating device 60 to cure the thermosetting resin contained in thephosphor layer 7.

The light emitting elements 20 with the supporting bodies may bearranged in a one-dimensional manner or two-dimensional manner. Ineither case, the light emitting elements 20 with the supporting bodiesare arranged apart from each other with their side surfaces exposed. Thesheet 40 is set on a stage, and this stage and the spray device 30 areconfigured so as to be relatively moved at least in a horizontaldirection. Thus, the phosphor layer 7 is formed on the upper surface andthe side surfaces of each light emitting element 20 with the supportingbody, by spray coating.

As for the side surface portion 7 b of the phosphor layer 7 formed onthe side surface portion of the light emitting element 20 with thesupporting body by the spray coating, as shown in FIG. 1A, while theuniform thickness is provided at least from the position HA at the upperend to the position HB at the lower side-surface end of thesemiconductor stacked layer body 3, the thickness of the phosphor layer7 formed by spray coating becomes thin downwardly from the position HB.In addition, the phosphor layer 7 is formed such that the position HD atthe lower end of the side surface portion 7 b is the same as theposition HE or higher than the position HE at the lower side-surface endof the resin layer 11 of the supporting body 10.

When the spray coating is performed for the light emitting element 20with the supporting body from above, a phosphor layer 7 c is formed onthe sheet 40 provided between the light emitting elements 20 with thesupporting bodies, similar to the surfaces of the light emitting element20 with the supporting body. When the spray coating is performed so thatthe phosphor layer 7 having the above-described configuration can beformed on the upper surface and the side surfaces of the light emittingelement 20 with the supporting body, the phosphor layer 7 on the lightemitting device 100 and the phosphor layer 7 c on the sheet 40 areformed separately from each other.

With reference to FIGS. 6A and 6B, a description will be given to astate of forming the phosphor layer 7 on the light emitting element 1increased in height with the supporting body 10 and a state of formingthe phosphor layer 7 on the light emitting element 1 not having thesupporting body, by spray coating from above. As shown in FIG. 6B, inthe case where the supporting body is not provided, a distance is shortbetween the upper surface of the light emitting element 1 and the uppersurface of the sheet 40 on which the light emitting element 1 isarranged, so that the phosphor layer 7 is continuously formed on theupper surface and the side surfaces of the light emitting element 1, andthe upper surface of the sheet 40. Therefore, for the singulation of thelight emitting element 1 having the phosphor layer 7 thereon, a step ofcutting the resin-containing phosphor layer 7 is required. When thespray coating is performed under the condition that the phosphor layer 7is not formed at the lower end portion of the light emitting element 1,the phosphor layer 7 formed on the side surfaces of the light emittingelement 1 cannot have an enough thickness, and the thickness cannot beuniform. Since the phosphor layer 7 is not provided at the lower portionof the side surface of the light emitting element 1, the light (such asblue light) is leaked from the light emitting element 1 without beingconverted. Furthermore, in cutting the phosphor layer 7, burr isgenerated at a cut portion, which could cause the phosphor layer 7 to bepeeled.

Meanwhile, as shown in FIG. 6A, in the case where the supporting body 10is provided, a distance is long between the upper surface of the lightemitting element 1 (position HA) and the upper surface of the sheet 40.Therefore, it becomes possible to set the condition of the spray coatingso that the phosphor layer 7 having almost the uniform thickness isformed on the side surface (at least from the position HA to theposition HB) of the light emitting element 1, and the phosphor layer 7is not formed at the lower end (position HE) of the side surface of thesupporting body 10. In the phosphor layer forming step S16, the lightemitting device 100 can be formed with the light emitting element keptin the singulated state, so that there is no need to singulate the lightemitting element by cutting the phosphor layer 7 formed on the lightemitting device 100 from the phosphor layer 7 c formed on the sheet 40,or the like. Since the phosphor layer 7 can be thinly formed on thelower side-surface portion 7 b 2 of the phosphor layer 7 withoutgenerating the burr, the light emitting device 100 can be mounted on themounting substrate with a narrow pitch, so that a packaging density ofthe components can be improved.

In addition, it is possible to adjust the region of the upperside-surface portion 7 b 1 having the uniform thickness, and the regionof the lower side-surface portion 7 b 2, that is, the position HC to theposition HD shown in FIG. 1A having the decreasing thickness in thedownward direction, by altering a prescription of the slurry to besprayed, a sprayed amount, and a condition of a temporary curingprocess. For example, as a solvent ratio in the slurry is increased, oras the sprayed amount of the slurry is increased, or as a temperature ofthe temporary curing process is lowered, the region of the upperside-surface portion 7 b 1 and the lower side-surface portion 7 b 2 canbe elongated and reach the lower part. On the contrary, as the solventratio in the slurry is reduced, or as the sprayed amount of the slurryis reduced, or as the temperature of the temporary curing process israised, the region of the upper side-surface portion 7 b 1 and the lowerside-surface portion 7 b 2 can be shortened.

As described above, it is preferable that, when the phosphor layer 7 isformed by spray coating, the phosphor layer 7 formed on the side surfaceof the supporting body 10 is separated from the phosphor layer 7 cformed on the sheet 40, but they may be continuously formed. Even whenthe phosphor layer 7 and the phosphor layer 7 c are continuously formed,the phosphor layer 7 is thinner in the vicinity of the lower end(position HE) of the supporting body 10 than at least the side surfaceportion of the light emitting element 1 because the light emittingelement 1 is increased in height with the supporting body 10. Therefore,when the light emitting device 100 is picked up with a collet 50 and apin 51, in the mounting step S17, the phosphor layer 7 can be torn offin the vicinity of the lower end portion (position HE) of the sidesurface of the supporting body 10 and easily separated from the phosphorlayer 7 c on the sheet 40. When an expandable sheet is used as the sheet40 and the sheet 40 is expanded in a sheet in-plane direction after thephosphor layer 7 has been formed, the phosphor layer 7 can be torn offand easily separated from the phosphor layer 7 c on the sheet 40.

The spray device 30 is not limited in particular, but the spray device30 preferably employs a pulsed spray method in which the spray SP isinjected in a pulsed way, that is, intermittently. The intermittentspraying can reduce an injection amount per unit time. Therefore, thespray device 30 sprays a small amount of slurry while being moved at lowspeed, so that the slurry can be uniformly applied to the side surfaceand a corner portion of the uneven spray surface. In addition, thepulsed spray method can reduce an air velocity without reducing a sprayvelocity of the slurry from a nozzle, compared with a continuous spraymethod. Therefore, when the pulsed spray method is used, the slurry canbe preferably supplied to the surface similarly to the continuous spraymethod, and in addition, the applied slurry is not disturbed by an airflow. As a result, the sprayed film can be high in adhesiveness betweenthe particles of the phosphor and the surface of the light emittingelement 1.

Since the pulsed spray method can reduce the spray amount, a thin filmcan be formed by reducing the spray amount applied at one time of thespraying process. Thus, by repeating the spraying process several times,the phosphor layer 7 having the highly precise thickness can be formedas a stacked layer body of the thin film sprayed layers. In addition, byperforming the temporary curing process to the thermosetting resin withrespect to each time or several times (three times, for example) of thespraying process, the uniform phosphor layer 7 having the highly precisethickness can be formed without causing dripping on the side surfaceportion. The pulsed spray method and the temporary curing process willbe described in detail below.

Furthermore, the slurry to be applied by the spray device 30 contains asolvent, a thermosetting resin, and a granular phosphor. An inorganicfiller may be further added to the slurry. In addition, the slurry canbe sprayed and is adjusted so as to have appropriate viscosity so that aslurry applied on the side surface portion of the light emitting element20 with the supporting body does not drip.

The thermosetting resin is not limited in particular as long as it hasfavorable light transmissive properties for the wavelength of lightemitted from the light emitting element 1 and the wavelength of lightemitted from the phosphor contained in the phosphor layer 7, and theabove silicone resin, epoxy resin, and urea resin can be used.Specifically, an example of the thermosetting resin includes a siliconeresin manufactured by Shin-Etsu Chemical Co., Ltd. (product name:LPS-3541). Furthermore, as the solvent, organic solvents such asn-hexane, n-heptane, toluene, acetone, and isopropanol may be used.

In addition, it is preferable that the thermosetting resin which is in asolid state at room temperature is dissolved in a solvent when used.This makes it possible to cure the phosphor layer 7 formed of appliedslurry to have appropriate hardness by the temporary curing process.

Here, the temporarily curing means that the solvent contained in thephosphor layer 7 is evaporated and the phosphor layer 7 is incompletelycured by heating for a predetermined time at a predetermined temperaturelower than the curing temperature at which the thermosetting resincompletely causes a cross-linking reaction. That is, the amount of thesolvent evaporated can be controlled by controlling the heatingtemperature and the heating time in the temporary curing process, and asa result, the hardness of the phosphor layer 7 can be adjusted.Furthermore, final curing means that the thermosetting resin is cureddue to cross-linking reaction by heating for a predetermined time at apredetermined temperature equal to or higher than the temperature(curing temperature) at which the thermosetting resin causescross-linking reaction. In addition, during the final curing process,the solvent contained in the phosphor layer 7 is almost completelyevaporated.

A prescription example of the slurry is shown below.

Thermosetting resin: silicone resin (LPS3541)

Solvent: n-heptane

Phosphor:thermosetting resin:solvent (mass ratio)=15:10:15

Furthermore, the constituents of the slurry is preferably adjusted sothat the slurry has a viscosity of 0.01 to 1000 mPa·s (mm Pascal/sec),and more preferably 0.1 to 100 mPa·s. When the slurry has the viscositywithin this range, the slurry can be uniformly sprayed and excessivedripping can be prevented after sprayed.

In the pulsed spray method, the slurry containing the phosphor, theresin, and the solvent and having a low phosphor concentration isapplied to a workpiece (spray target body) with a two-fluid nozzlecapable of simultaneously spraying gas and liquid, while respectivelybeing turned ON/OFF in a pulsed way. The workpiece is previously warmedup, so that the solvent is instantaneously evaporated on a surface ofthe workpiece and the extremely thin layer containing the phosphor canbe formed. That is, the spraying process and the temporary curingprocess can be substantially performed at the same time. By repeatingthe above processes, the phosphor layer 7 can be formed so as to havethe laminated thin resin films each containing the phosphor.

Here, an example of the spray device 30 will be described with referenceto FIG. 7. The spray device 30 shown in FIG. 7 is suitable for sprayinga slurry as a spray solution containing solid particles. That is, thespray device 30 is configured to constantly stir the slurry as the spraysolution so that the solid particles in the slurry are evenly diffusedall the time without being settled down, and the slurry having evenlydiffused solid particles can be sprayed. Thus, the spray device 30 shownin FIG. 7 includes two syringes 31 and 32, a circulation path 33 forconnecting lower ends of the syringes 31 and 32, and a valve 34 with anozzle provided in the middle of the circulation path 33.

The syringe 31 is a cylindrical container internally including a plunger31 a and containing slurry SL. A lower end of the syringe 31 isnarrowed, and the lower end communicates with the circulation path 33.Furthermore, a compressed air 31 b is internally introduced from anupper end of the syringe 31 through a valve. Thus, the slurry SL in thesyringe 31 is pressed by the introduced compressed air 31 b through theplunger 31 a.

The syringe 32 has the same configuration as that of the syringe 31 andinternally contains slurry SL, and its narrowed lower end communicateswith the circulation path 33. Therefore, the syringe 31 and the syringe32 communicate with each other through the circulation path 33, so thatthe slurry SL internally contained in the syringes can be mixed witheach other. Similar to the syringe 31, a compressed air 32 b isinternally introduced from an upper end of the syringe 32 through avalve. Thus, the slurry SL in the syringe 32 is pressed by theintroduced compressed air 32 b through the plunger 32 a.

The valve 34 with the nozzle is provided in the middle of thecirculation path 33, and configured to inject the slurry SL in thecirculation path 33 from the nozzle having a downward opening.Furthermore, the valve 34 with the nozzle is configured to receivecompressed air from an outside and inject the compressed air from thenozzle so that the slurry SL can be injected as the spray SP.Furthermore, the valve 34 with the nozzle is configured to be able tocontrol the slurry amount and the compressed air amount to be injectedfrom the nozzle by adjusting opening degrees of the correspondingvalves.

Next, a description will be given to an operation for stirring theslurry SL in the spray device 30. The compressed air is supplied from adifferent compressed air source to the upper end of each of the syringes31 and 32. The compressed air is supplied such that a pressure of thecompressed air 31 b introduced to the syringe 31, and a pressure of thecompressed air 32 b introduced to the syringe 32 are pulsated indifferent phases (opposite phases, for example). The spray device 30 canmove the slurry SL back and forth between the syringes 31 and 32 throughthe circulation path 33, and as a result, the slurry SL can be stirred.

The slurry SL is constantly stirred, so that the slurry SL having theuniformly diffused phosphor serving as the solid particles is circulatedin the circulation path 33 all the time. When the slurry SL circulatedin the circulation path 33 is injected by the valve 34 with the nozzle,the spray SP evenly containing the phosphor particles can be injected.It is to be noted that the method of stirring and supplying the slurryis not limited to the above method, and as another method, a circulationpump may be put between the nozzle and syringe so that the slurry can bestirred and supplied while being circulated like a loop shape. Thus, themethod is to be selected according to a purpose of the spraying processand properties of the slurry.

Next, a description will be given to the spraying process by the pulsedspray method with the spray device 30. As described above, by the pulsedspray method, the spray SP is injected in the pulsed way, that is,intermittently. By adjusting the valve opening degree of the valve 34with the nozzle in the spray device 30, the injected amount of the spraySP can be controlled. As a simple method, the opening degree of thevalve is set at two stages such as “open” and “closed”, and the openingand closing are controlled at a predetermined cycle and a duty ratio, sothat the pulsed spraying process can be performed. The opening andclosing timing of the valves may be set so that the slurry SL and thecompressed air are supplied at the same time, or the opening timing ofthe valve for the compressed air may be set longer. Furthermore, inorder to keep the injected amount of the spray SP per unit time withhigh precision, a cycle of the opening and closing of the valve ispreferably set at 30 times to 3600 times per minute.

The pulsed spray method and the spray device suitable for spraying theslurry are described in detail in Reference document 1 and Referencedocument 2, so that a further description is omitted. (Referencedocument 1) JP 61-161175 A (Reference document 2) JP 2003-300000 A

Referring to FIGS. 5A to 5C again (refer to FIGS. 1A to 3 occasionally),the manufacturing step will be described again. In the phosphor layerforming step S16, a heating method of the heating device 60 for curingthe sprayed phosphor layer 7 is not limited in particular, and anappropriate heater or oven may be used such as a heater in contact witha lower surface of the sheet 40 as shown in FIG. 5B, or infraredradiation. In the case where the phosphor layer 7 is formed in such amanner that the resin thin films each containing the phosphor arelaminated by the spraying process performed several times, a heatingtemperature and/or a heating time of the heating device 60 are to beadjusted so that the phosphor layer 7 is temporarily cured after one ormore predetermined number of thin films have been laminated, and finallycured after all of the thin films have been laminated.

For example, in the case where the slurry provided according to theabove-described precipitation example is used, the curing process can beperformed under the following condition, for example.

(Film Formation by Spray Coating)

As the phosphor layer 7, three layers are laminated while the splayamount for one layer is set to about 0.7 mg/cm2.

(Temporary Curing)

A heating process is performed for 5 minutes at 150□C in an oven everytime the three layers are laminated, as the temporary curing process.

(Final Curing)

In a case where the phosphor layer 7 is formed by laminating the ninelayers in total while the temporary curing process is performed underthe above condition, a heating process is performed for 4 hours at 180□Cin an oven, as the final curing process.

Subsequently, in the mounting step S17, the light emitting device 100 ispicked up one by one with collet 50 and the pin 51 as shown in FIG. 5C,and set on the mounting region 94 of the mounting substrate 9 as shownin FIGS. 2A and 2B. More specifically, the collet 50 absorbs thephosphor layer 7 provided on the upper surface of the light emittingdevice 100, and the pin 51 pushes up the lower surface of the lightemitting device 100 from the back surface side of the sheet 40. In thisway, the light emitting device 100 can be easily removed from the sheet40. In the example shown in FIG. 5C, as described above, the pin 51 getsthrough the sheet 40 to push up the light emitting device 100, but asother configuration, the expandable sheet is used as the sheet 40, andthe pin 51 may push up the light emitting device 100 together with thesheet 40.

In the case where the sheet 40 has the UV-curing resin layer as theadhesive agent to hold the light emitting device 100, the sheet 40 is tobe irradiated with UV light so that the adhesive agent is cured and itsadhesiveness disappears before the light emitting device 100 is pickedup with the collet 50 and the pin 51. Thus, the light emitting device100 can be more easily removed from the sheet 40.

After the light emitting devices 100 are set on all of the mountingregions 94, the solder layers as the negative electrode connection layer93 n and the positive electrode connection layer 93 p are dissolved byheat in a reflow device. The n-side electrode 4 n is electricallyconnected to the negative side wiring electrode 92 n, and the p-sideelectrode 4 p is electrically connected to the positive side wiringelectrode 92 p in each light emitting device 100, whereby the mountingof the light emitting devices 100 to the mounting substrate 9 iscompleted.

As described above, the solder bonding method by heat is preferably usedto bond the electrode of the face-down mounting type light emittingdevice 100 to the electrode of the mounting substrate 9. Compared withthe flip-chip mounting which is a bonding method using a pressure orultrasonic vibration, a mechanical load is not applied to the phosphorlayer 7 as the resin layer provided on the upper surface of the lightemitting device 100, so that a damage such as a crack in the phosphorlayer 7 can be prevented from occurring.

The light emitting devices 100 may be sealed with a sealing member suchas a resin or glass after the electrodes are bonded. Through the abovesteps, the light emitting device 110 with the mounting substrate iscompleted.

<Other Variations of Light Emitting Device>

Next, other variations of the light emitting device according to thefirst embodiment of the present invention will be described withreference to FIGS. 8A and 8B (refer to FIGS. 1A to 2B occasionally).

Configuration of Light Emitting Device

The light emitting device in the present invention is not limited to theface-down mounting type such as the light emitting device 100 shown inFIG. 1A or the light emitting device 100A shown in FIG. 1B. A lightemitting device 100B as a variation shown in FIG. 8A is a face-upmounting type, and a light emitting device 100C as a variation shown inFIG. 8B is a vertical mounting type.

(Face-up Mounting Type)

As shown in FIG. 8A, in the face-up mounting type light emitting device100B, a surface having the semiconductor stacked layer body 3 of a lightemitting element 1B is a light extracting surface, and a supporting body10B is provided on the lower surface of the growth substrate 2. Thephosphor layer 7 is provided on an upper surface and side surfaces of alight emitting element 20B with the supporting body which is composed ofthe light emitting element 1B and the supporting body 10B. In addition,the n-side electrode 4 n and the p-side electrode 4 p are exposed in theupper surface portion 7 a of the phosphor layer 7, and are to beconnected respectively to the negative side wiring electrode 92 n andthe positive side wiring electrode 92 p of the mounting substrate 9shown in FIGS. 2A and 2B by wire bonding.

In the light emitting element 20B with the supporting body, light isextracted from the entire upper surface and the entire side surfaces ofthe light emitting element 1B. Therefore, the light emitting element 20Bwith the supporting body has the upper side-surface portion 7 b 1 havingthe uniform thickness at least from an upper surface (position HA) ofthe light emitting element 1B to a lower surface (position HB) of thelight emitting element 1B. In this example, the upper side-surfaceportion 7 b 1 reaches the position HC which is the middle of the sidesurface portion of the supporting body 10B. In addition, as for thelower side-surface portion 7 b 2 having the smaller thickness than theupper side-surface portion 7 b 1 in the side surface portion 7 b of thephosphor layer 7, its lower end, that is, the position HD is the same asthe position HE or higher than the position HE at the lower end of thesupporting body 10B.

The overall electrode 5 provided on the upper surface of the p-typesemiconductor layer 3 p is made of a light transmissive conductivematerial such as ITO (indium tin oxide). The supporting body 10Bprovided on the lower surface of the growth substrate 2 may be composedof the resin layer 11 containing the light reflective inorganic fillerso as to function as a reflecting member. In the case of the face-upmounting type, it is not necessary to provide the electrode on the lowersurface of the light emitting device 100B, so that unlike the supportingbody 10 shown in FIG. 1A, the supporting body 10B does not have theconductive members 12 n and 12 p and the pad electrodes 13 n and 13 p,and the supporting body 10B is only composed of the resin layer 11. Inaddition, a DBR (Distributed Bragg Reflector) film, a metal film, or areflecting layer provided by combining the above films may be providedbetween the growth substrate 2 and the supporting body 10B, instead ofor in addition to containing the light reflective inorganic filler inthe resin layer 11. Furthermore, instead of the resin layer 11, aninorganic material layer of glass or metal may be used.

(Vertical Mounting Type)

As shown in FIG. 8B, the vertical mounting type light emitting device100C includes a light emitting element 1C in which the growth substrate2 is removed, and a conductive supporting substrate 2C is providedadjacent to the p-type semiconductor layer 3 p with the overallelectrode 5 a and the cover electrode 5 b interposed therebetween. Inthe light emitting element 1C, the n-type semiconductor layer 3 n servesas the light extracting surface, and a supporting body 10C is providedon a lower surface of the supporting substrate 2C. The phosphor layer 7is provided on an upper surface and side surfaces of a light emittingelement 20C with the supporting body which is composed of the lightemitting element 1C and the supporting body 10C. The n-side electrode 4n is exposed on the upper surface portion 7 a of the phosphor layer 7,so that the n-side electrode 4 n can be connected to the negative sidewiring electrode 92 n of the mounting substrate 9 shown in FIGS. 2A and2B by wire bonding, for example.

In the light emitting element 20C with the supporting body, light isextracted from the entire upper surface and the entire side surfaces ofthe semiconductor stacked layer body 3. Thus, the light emitting element20C with the supporting body has the upper side-surface portion 7 b 1having the uniform thickness at least from the upper surface (positionHA) of the semiconductor stacked layer body 3 to the lower surface(position HB) of the semiconductor stacked layer body 3. The upperside-surface portion 7 b 1 reaches the position HC which is the middleof the side surface portion of the supporting body 10B, but the upperside-surface portion 7 b 1 may reach the middle of the side surface ofthe supporting substrate 2C in this example. In addition, as for thelower side-surface portion 7 b 2 having the thickness smaller than theupper side-surface portion 7 b 1 in the side surface portion 7 b of thephosphor layer 7, its lower end, that is, the position HD is the same asthe position HE or higher than the position HE at the lower end of thesupporting body 10B.

The supporting body 10C provided on the lower surface of the conductivesupporting substrate 2C does not need to function as the reflectingmember, so that the supporting body may be made of the resin layer 11not containing the light reflective inorganic filler. In addition, thesupporting substrate 2C of the light emitting element 1C also functionsas the p-side electrode, and the supporting body 10C has the throughhole penetrating the resin layer 11 in the thickness direction, and theconductive member 12 p is provided in the through hole. The padelectrode 13 p is provided at the lower end portion of the conductivemember 12 p. In the vertical mounting type light emitting device 100C,the n-side electrode 4 n serving as one electrode is electricallyconnected to the negative side wiring electrode 92 n of the mountingsubstrate 9 shown in FIGS. 2A and 2B by wire bonding as described above,and the p-side pad electrode 13 p serving as the other electrode iselectrically connected to the positive side wiring electrode 92 p with asolder. The resin layer 11 may be made of an insulating inorganicmaterial such as glass, and the whole supporting body 10C may becomposed of a metal layer.

Operation of Light Emitting Device

(Face-Up Mounting Type)

Next, an operation of the light emitting device 100B will be describedwith reference to FIG. 8A (refer to FIGS. 2A and 2B occasionally). Thedescription will be given on the condition that the light emittingdevice 100B is mounted on the mounting substrate 9 shown in FIGS. 2A and2B in the same manner described above, the light emitting element 1Bemits blue light, and the phosphor layer 7 emits yellow light, forconvenience of the description. A path of the light after being emittedfrom the light emitting device 100B is the same as that of the lightemitting device 100 shown in FIG. 1A, so that its description isomitted. The same is true in a description of the light emitting device100C.

In the light emitting device 100B shown in FIG. 8A, when a current issupplied between the p-side electrode 4 p and the n-side electrode 4 nof the light emitting element 1B through the mounting substrate 9 shownin FIGS. 2A and 2B and a bonding wire, the light emitting layer 3 a ofthe light emitting element 1B emits blue light.

The blue light emitted from the light emitting layer 3 a of the lightemitting element 1B is propagated in the semiconductor stacked layerbody 3 and the growth substrate 2, and emitted from the upper surface orthe side surfaces of the light emitting element 1B. This light ispartially absorbed by phosphor particles in the phosphor layer 7,converted to yellow light, and externally extracted. In addition, theblue light partially passes through the phosphor layer 7 without beingabsorbed and externally extracted. The light propagated downward in thelight emitting element 1B is reflected upward by the resin layer 11having the light reflective inorganic filler in the supporting body 10B,and emitted from the upper surface or the side surfaces of the lightemitting element 1B.

(Vertical Mounting Type)

Next, an operation of the light emitting device 100C will be describedwith reference to FIG. 8B (refer to FIGS. 2A and 2B, occasionally). Inthe light emitting device 100C shown in FIG. 8B, when a current issupplied between the supporting substrate 2C serving as the p-sideelectrode C and the n-side electrode 4 n in the light emitting device100C through the mounting substrate 9 shown in FIGS. 2A and 2B, abonding wire, the pad electrode 13 p, and the conductive member 12 p,the light emitting layer 3 a of the light emitting element 1B emits bluelight.

The blue light emitted from the light emitting layer 3 a of the lightemitting element 1C is propagated in the semiconductor stacked layerbody 3, and emitted from the upper surface or the side surfaces of thesemiconductor stacked layer body 3. This light is partially absorbed byphosphor particles in the phosphor layer 7, converted to yellow light,and externally extracted. In addition, the blue light partially passesthrough the phosphor layer 7 without being absorbed, and externallyextracted. The light propagated downward in the semiconductor stackedlayer body 3 is reflected upward by the overall electrode 5 a, andemitted from the upper surface or the side surfaces of the semiconductorstacked layer body 3.

Method of Manufacturing Light Emitting Device

Next, a method of manufacturing each of the light emitting device 100Band the light emitting device 100C will be described. Each of the lightemitting device 100B and the light emitting device 100C can bemanufactured by sequentially performing the steps from the lightemitting element preparing step S11 to the phosphor layer forming stepS16, similar to the method of manufacturing the light emitting device100 shown in FIG. 3.

In the light emitting element preparing step S11, the face-up mountingtype light emitting elements 1B and the vertical mounting type lightemitting elements 1C are manufactured as wafers by known methods,respectively, and detailed descriptions are omitted. Furthermore, thesingulating step S13, the light emitting element selecting step S14, thelight emitting element arranging step S15, and the phosphor layerforming step S16 are the same as the corresponding steps for the lightemitting device 100, so that their descriptions are omitted.Hereinafter, the supporting body forming step S12 will be described.

(Face-Up Mounting Type)

First, a description will be given to the case of the face-up mountingtype light emitting device 100B. In the supporting body forming stepS12, the resin layer 11 is formed on the back surface of the growthsubstrate 2 of the light emitting elements 1B in the wafer state by spincoating, spray coating, casting, or the like. Thus, the light emittingelements 20B with the supporting body in the wafer state are formed.Furthermore, the back surface of the resin layer 11 may be cut orpolished to adjust the thickness of the resin layer 11.

(Vertical Mounting Type)

Next, a description will be given to the case of the vertical mountingtype light emitting device 100C. In the supporting body forming stepS12, the resin layer 11 is formed on the back surface of the supportingsubstrate 2C of the light emitting elements 1C in the wafer state byspin coating, spray coating, casting, or the like. Similar to thesupporting body 10 of the light emitting device 100, the through hole isformed in the resin layer 11, the conductive member 12 p is formed inthe through hole, and the pad electrode 13 p is formed at the lower endof the conductive member 12 p. Thus, the wafer-state light emittingelements 20C with the supporting body are formed.

In the phosphor layer forming step S16 for the face-up mounting typelight emitting device 100B or the vertical mounting type light emittingdevice 100C, the electrode portion (4 n and 4 p, or 4 n) provided on thelight extracting surface is exposed in the following manner. First, aprotection film is formed of a water-soluble resist in a region toexpose the electrode portion, and then the phosphor layer 7 is formed byspray coating. After that, the water-soluble resist is washed with waterand removed together with the phosphor layer 7 formed on thewater-soluble resist. Thus, the electrode portion can be exposed.Alternatively, after the phosphor layer 7 is formed in the regionincluding the electrode portion by spray coating, the phosphor layer 7on the electrode portion may be removed by laser abrasion or the like,whereby the electrode portion can be exposed.

As described above, the light emitting device 100B and the lightemitting device 100C can be manufactured. Furthermore, as describedabove, the mounting substrate 9 shown in FIGS. 2A and 2B mounts thelight emitting device 100B thereon with the wire, and the light emittingdevice 100C with the wire and solder.

<Second Embodiment>

Configuration of Light Emitting Device

Next, a light emitting device according to a second embodiment will bedescribed with reference to FIG. 9. As shown in FIG. 9, in a lightemitting device 100D in the second embodiment, a light reflecting resinlayer 14 is formed on the side surfaces of the supporting body 10, andthe phosphor layer 7 is formed so as to cover an outer side of thereflecting resin layer 14. In a case where the resin layer 11 of thesupporting body 10 is made of a light transmissive material, the lightcan be reflected and returned to the light emitting element 1 afterbeing leaked from the lower surface and the side surfaces of the lightemitting element 1 and propagated in the resin layer 11, so that thereis an improvement in light extracting efficiency from the upper surfaceserving as the light extracting surface of the light emitting element 1.The light transmissive resin material also contains an element whichpartially absorbs the light inputted in the resin.

The reflecting resin layer 14 is made of a light transmissive resincontaining a light reflective filler. The light transmissive resinincludes the one having favorable light transmittance among the resinmaterials used for the resin layer 11 or the phosphor layer 7. Inaddition, the light reflective filler may be the above-describedinorganic filler for giving light diffusion properties to the phosphorlayer 7.

As described above, the light emitting element 1 emits the light notonly from the upper surface but also from the side surfaces, so that thereflecting resin layer 14 may be provided so as to entirely or partiallycover the side surfaces of the light emitting element 1 in addition tothe side surfaces of the resin layer 11 serving as the side surfaces ofthe supporting body 10. In the example shown in FIG. 9, the position HBat the upper end of the reflecting resin layer 14 corresponds to aposition of the upper surface of the semiconductor stacked layer body 3.That is, the reflecting resin layer 14 covers the entire side surfacesof the semiconductor stacked layer body 3 in addition to the entire sidesurfaces of the resin layer 11. Therefore, in the light emitting device100D, the light is extracted from the upper surface and the sidesurfaces of the growth substrate 2 which are not covered with thereflecting resin layer 14.

Thus, the phosphor layer 7 is formed such that the upper side-surfaceportion 7 b 1 having the uniform thickness is provided from the positionHA at the upper surface of the growth substrate 2 to the position HClower than the position HB which corresponds to the end of the lightemission side surface of the light emitting element 1, that is, thelower surface of the growth substrate 2, and the lower side-surfaceportion 7 b 2 is provided from the position HC to the position HD higherthan the position HE at the lower end of the supporting body 10. Theposition of the upper end of the reflecting resin layer 14 may be atleast the same as or higher than the upper end of the side surface ofthe resin layer 11, and may be between the position HA at the upper endand the lower end of the side surface of the growth substrate 2.

In addition, the position HC may be at least the same as the position HBor lower than the position HB, and the position HC is preferably closeto the position HB. The position HD may be at least the same as theposition HE or higher than the position HE, and the position HD ispreferably close to the position HC. Thus, it is possible to prevent thelight of the color converted by the phosphor from being excessivelyemitted from under the light extracting surface.

In addition, when the reflecting layer 95 (refer to FIGS. 2A and 2B) ofthe mounting substrate 9 is formed to be extended and reach the lowersurface position of the light emitting device 100D, the light leakingfrom the lower surface of the supporting body 10 can be reflectedupward. Furthermore, the reflecting resin layer 14 may be provided so asto cover the lower surface of the supporting body 10 except for theregions of the pad electrodes 13 n and 13 p.

Operation of Light Emitting Device

The light emitting element 100D according to the present embodiment isthe same as the light emitting device 100 according to the firstembodiment shown in FIG. 1A except that the light is reflected by thereflecting resin layer 14, returned to the light emitting element 1, andextracted from the light extracting surface after being emitted from thelight emitting element 1 and propagated in the resin layer 11 of thesupporting body 10, so that its detailed description is omitted.

Method of Manufacturing Light Emitting Device

The light emitting device 100D according to the present embodiment canbe manufactured by performing a step of forming the reflecting resinlayer 14 on the side surfaces of the supporting body 10, between thelight emitting element arranging step S15 and the phosphor layer formingstep S16 in the method of manufacturing the light emitting device 100according to the first embodiment shown in FIG. 3.

The step of forming the reflecting resin layer 14 can be performed asfollows. For example, a slurry containing a reflective filler and aresin is sprayed to predetermined surfaces (the side surfaces, or theside surfaces and the lower surface) of the supporting body 10, ameniscus of the slurry is formed so as to only cover the predeterminedsurfaces of the supporting body 10, and the slurry is dried, whereby thereflecting resin layer 14 can be formed.

In addition, the reflecting resin layer 14 can be formed so as to haveexcellent adhesiveness with the phosphor layer 7 by the followingprocess. First, a high-viscosity slurry containing the reflective fillerand a thermosetting resin is applied to the desired regions of the sidesurfaces, or the side surfaces and the lower surface of the supportingbody 10, from a pneumatic dispenser. Here, the slurry as the rawmaterial of the reflecting resin layer 14 preferably has a viscosityhigher than that of the slurry as the raw material of the phosphor layer7. In the state that the reflecting resin layer 14 is not cured yet, theslurry as the raw material of the phosphor layer 7 is sprayed. Then, thereflecting resin layer 14 and the phosphor layer 7 are heated andtemporarily cured. At this time, the reflecting resin layer 14 and thephosphor layer 7 are in contact with each other in the uncured state andthen temporarily cured, so that the two resin layers can be bondedstrongly with high adhesiveness. Furthermore, since the slurry as theraw material of the reflecting resin layer 14 has the high viscosity,the slurry is not excessively mixed with the phosphor layer 7 appliedlater, so that the phosphor layer 7 can be formed in a desired regionwith high precision.

In the light emitting element arranging step S15 (refer to FIG. 3), theexpandable sheet may be used as the sheet 40 (refer to FIG. 5A) on whichthe light emitting element 20 with the supporting body is arranged. Inthis case, by expanding the sheet 40 after the reflecting resin layer 14and the phosphor layer 7 have been formed, the reflecting resin layer 14can be torn off and easily separated at the lower end portion of thelight emitting element 20 with the supporting body. The light emittingdevice 100D can be mounted on the mounting substrate 9 (refer to FIGS.2A and 2B) in the same manner as the light emitting device 100.

<Third Embodiment>

Configuration of Light Emitting Device

Next, a light emitting device according to a third embodiment will bedescribed with reference to FIG. 10A. As shown in FIG. 10A, a lightemitting device 100E in the third embodiment differs from the lightemitting device 100A shown in FIG. 1B in that a supporting body 10E isprovided instead of the supporting body 10. The supporting body 10E isprovided such that the resin layer 11 covers the side surfaces of thelight emitting element 1A, in addition to the lower surface of the lightemitting element 1A. In addition, the resin layer 11 is made of afavorably reflecting resin obtained by mixing a light reflective fillerin a light transmissive resin.

In the light emitting device 100E in the present embodiment, since theside surfaces of the light emitting element 1A are covered with thereflecting resin layer 11, the light is not extracted from the sidesurfaces of the light emitting device 100E, and the light is onlyextracted from the upper surface of the light emitting device 100E.Therefore, the side surface portion of the phosphor layer 7 is not usedfor converting the wavelength, so that the position HD at the lower endof the side surface of the phosphor layer 7 may be at least the same asthe position HE or higher than the position HE at the lower end of theside surface of the supporting body 10E, and the upper side-surfaceportion 7 b 1 and the lower side-surface portion 7 b 2 are preferablyshort. Other configurations are the same as those of the light emittingdevice 100A shown in FIG. 1B, so that a detailed description is omitted.

Operation of Light Emitting Device

The light emitting device 100E according to the present embodimentdiffers from the light emitting device 100A shown in FIG. 1B in a pathof the light emitted from the side surfaces of the light emittingelement 1A. In the light emitting device 100A, the light emitted fromthe side surface of the light emitting element 1A is externallyextracted through the phosphor layer 7. Meanwhile, in the light emittingdevice 100E, the light emitted from the side surface of the lightemitting element 1A is reflected by the resin layer 11 covering the sidesurface, returned into the light emitting element 1A, and externallyextracted from the upper surface of the light emitting element 1Athrough the phosphor layer 7. Other paths are the same as those in thecase where the light reflecting resin is used for the resin layer 11 ofthe light emitting device 100A, so that its description is omitted.

Method of Manufacturing Light Emitting Device

The light emitting device 100E according to the present embodiment canbe manufactured by partially changing the method of manufacturing thelight emitting device 100A. First, in the light emitting elementpreparing step S11 (refer to FIG. 3), as shown in FIG. 11A, thesemiconductor stacked layer body 3 is completely etched away to exposethe growth substrate 2 in a boundary region 3 c between the lightemitting elements 1 arranged on the growth substrate 2.

Subsequently, in the first sub step of the supporting body forming stepS12 (refer to FIG. 3), as shown in FIG. 11B, the resin layer 11 servingas the base of the supporting body is formed on the entire surface ofthe wafer. At this time, the side surfaces of the semiconductor stackedlayer body 3 of the light emitting element 1 are covered with the resinlayer 11. After that, similar to the light emitting device 100A, the substeps of the supporting body forming step S12 are performed, the growthsubstrate 2 is removed, the light emitting elements 1 are diced alongthe cut lines X in the singulating step S13 so that the resin layer 11is left on the side surface portion of the light emitting element 1,whereby the light emitting device 100E is provided. Furthermore, thelight emitting device 100E can be mounted on the mounting substrate 9(refer to FIGS. 2A and 2B) in the same manner as the light emittingdevice 100.

<Fourth Embodiment>

Configuration of Light Emitting Device

Next, a light emitting device according to a fourth embodiment will bedescribed with reference to FIG. 10B. As shown in FIG. 10B, a lightemitting device 100F in the fourth embodiment differs from the lightemitting device 100 shown in FIG. 1A in that a supporting body 10F isprovided instead of the supporting body 10. The supporting body 10F isprovided such that the resin layer 11 covers the side surfaces, inaddition to the lower surface of the light emitting element 1. The lightemitting device 100F is configured such that the growth substrate 2 ispositioned on an inner side of the resin layer 11 of the supporting body10F in a plan view. The resin layer 11 is made of a favorably reflectingresin provided by mixing a light reflective filler in a lighttransmissive resin.

In the light emitting device 100F in the present embodiment, since theside surfaces of the semiconductor stacked layer body 3 of the lightemitting element 1 are covered with the light reflecting resin layer 11,the light is extracted from the upper surface and the side surfaces ofthe growth substrate 2 of the light emitting device 100F. Therefore, theside surface portion of the phosphor layer 7 under the position HB atthe lower surface of the growth substrate 2 is not used for thewavelength conversion. Therefore, the position HC at the lower end ofthe upper side-surface portion 7 b 1 of the phosphor layer 7 may be atleast the same as the position HB or lower than the position HB at thelower end of the light emission side surface of the light emittingelement 1, that is, the lower end of the growth substrate 2, and theposition HD at the lower end of the lower side-surface portion 7 b 2 maybe at least the same as the position HE or higher than the position HEat the lower end of the supporting body 10F.

Operation of Light Emitting Device

The light emitting device 100F according to the present embodimentdiffers from the light emitting device 100 shown in FIG. 1A in a path ofthe light emitted from the side surfaces of the semiconductor stackedlayer body 3 of the light emitting element 1. In the light emittingdevice 100, the light emitted from the side surfaces of thesemiconductor stacked layer body 3 is externally extracted through thephosphor layer 7. Meanwhile, in the light emitting device 100F, thelight emitted from the side surfaces of the semiconductor stacked layerbody 3 is reflected by the resin layer 11 covering the side surfaces,returned into the light emitting element 1, and externally extractedfrom the upper surface of the light emitting element 1 or the sidesurfaces of the growth substrate 2 through the phosphor layer 7. Otherpaths are the same as those in the case where the light reflecting resinis used for the resin layer 11 of the light emitting device 100, so thatits description is omitted.

Method of Manufacturing Light Emitting Device

The light emitting device 100F according to the present embodiment canbe manufactured by partially changing the method of manufacturing thelight emitting device 100. Similar to the method of manufacturing thelight emitting device 100E, in the light emitting element preparing stepS11 (refer to FIG. 3), the semiconductor stacked layer body 3 iscompletely etched away to expose the growth substrate 2 in the boundaryregion 3 c (refer to FIG. 11A) between the light emitting elements 1arranged on the growth substrate 2.

Subsequently, in the first sub step of the supporting body forming stepS12 (refer to FIG. 3), as shown in FIG. 11B, the resin layer 11 servingas the base of the supporting body is formed on the entire surface ofthe wafer. At this time, the side surfaces of the semiconductor stackedlayer body 3 of the light emitting element 1 are covered with the resinlayer 11. In addition, before the singulating step S13 (refer to FIG.3), that is, before the dicing is performed to completely cingulate theboundary regions, grooves are formed in the growth substrate 2 along thecut lines X so as to reach inner sides of the resin layer 11. Thisgroove may be diced by a diamond blade, or formed by wire cutting orlaser scribing/abrasion. Furthermore, in a case where the growthsubstrate 2 is made of SiC or GaN, the groove can be formed into a morecomplicated shape to improve the light extracting efficiency. Due tothis shape, the height increasing effect for the spray coating can bemaintained, and the light propagated to the lower surface of the growthsubstrate 2 can be reflected to the upper surface by the resin layer 11to be extracted, so that the LED can be high in light emissionefficiency.

This structure of the growth substrate 2 may be formed after the lightemitting element 1 has been increased in height with the supporting body10F and arranged again on an adhesive jig sheet, or formed afterhalf-dicing has been performed to the extend that the resin layer 11 isnot completely cut but halfway cut from the state shown in FIG. 11B.Other steps are performed similarly to the light emitting device 100,whereby the light emitting device 100F is provided. Furthermore, thelight emitting device 100F can be mounted on the mounting substrate 9(refer to FIGS. 2A and 2B) in the same manner as the light emittingdevice 100.

As described above, according to the method of forming the phosphorlayer in the present invention, compared with the method of forming thephosphor layer 7 using the electrodeposition method disclosed in JP2003-69086 A, there is no need to form a specific layer such as aconductive layer, so that there are few restrictions in the structureand material of the light emitting element which can be used, and themethod is high in degree of freedom. In addition, according to themethod in the present invention, since the phosphor layer 7 is formed onthe light emitting element 1 by the spray coating from above with thelight emitting element 1 increased in height with the supporting body10, the phosphor layer having the uniform thickness can be easily formedon the entire exposed surface of the light emitting element 1 in thesimple manner for any structure of the light emitting element 1.

In the above, the light emitting device and the method of manufacturingthe light emitting device according to the present invention have beendescribed in the embodiments of the present invention, but the scope ofthe present invention is not limited to the above description, and it isto be widely interpreted based on the description of claims. Inaddition, various modifications and variations made based on the abovedescription are also included in the scope of the present invention, asa matter of course.

What is claimed is:
 1. A light emitting device comprising: asemiconductor light emitting element including a pair of electrodes; asupporting body supporting the semiconductor light emitting element, thesupporting body including a pair of conductive members respectivelyconnected to the electrodes of the semiconductor light emitting elementand a resin layer covering side surfaces of the conductive members; anda wavelength conversion layer continuously covering an upper surface andside surfaces of the semiconductor light emitting element and a portionof side surfaces of the resin layer of the supporting body while aportion of the side surfaces of the resin layer of the supporting bodyis exposed from the wavelength conversion layer; wherein a thickness ofthe wavelength conversion layer at least at a lower portion of each ofthe side surfaces of the resin layer of the supporting body is smallerthan a thickness of the wavelength conversion layer on the upper surfaceand the side surfaces of the semiconductor light emitting element. 2.The light emitting device according to claim 1, wherein the wavelengthconversion layer on the side surfaces of the semiconductor lightemitting element and the side surfaces of the supporting body is formedso as to have a substantially uniform thickness at least between anupper end of the semiconductor light emitting element and a lower end ofthe semiconductor layer.
 3. The light emitting device according to claim1, wherein the resin layer covers a side of the semiconductor lightemitting element on which the electrodes are provided.
 4. The lightemitting device according to claim 3, wherein one end of each of theconductive members that is disposed opposite from the correspondingelectrode of the semiconductor light emitting element is exposed fromthe resin layer.
 5. The light emitting device according to claim 4wherein the supporting body includes a pad electrode electricallyconnected to the other end of the conductive members, on a surfaceopposite to a surface in contact with the semiconductor light emittingelement.
 6. The light emitting device according to claim 1, wherein thethickness of the wavelength conversion layer on the side surfaces of thesupporting body decreases downward in a tapered shape.
 7. The lightemitting device according to claim 1, wherein in a plan view, thesupporting body is positioned to overlap with the semiconductor lightemitting element or be at an inner side of the semiconductor lightemitting element.
 8. The light emitting device according to claim 1,wherein the resin layer contains a reflective filler which reflects atleast light of a wavelength emitted from the semiconductor lightemitting element.
 9. The light emitting device according to claim 1,wherein at least a portion of the upper surface of the semiconductorlight emitting element includes a semiconductor layer.
 10. The lightemitting device according to claim 1, wherein a part of the wavelengthconversion layer that covers the upper surface of the semiconductorlight emitting element has almost a uniform thickness.
 11. The lightemitting device according to claim 1, wherein a part of the wavelengthconversion layer that continuously covers from an upper end of each ofthe side surfaces of the semiconductor light emitting element to amiddle of each of the side surfaces of the resin layer of the supportbody has almost a uniform thickness.
 12. The light emitting deviceaccording to claim 1, wherein a part of the wavelength conversion layerthat covers the upper surface of the semiconductor light emittingelement has a thickness approximately equal to or smaller than athickness of a part of the wavelength conversion layer that continuouslycovers from an upper end of each of the side surfaces of thesemiconductor light emitting element to a middle of each of the sidesurfaces of the resin layer of the support body.
 13. The light emittingdevice according to claim 1, wherein a part of the wavelength conversionlayer that covers the upper surface of the semiconductor light emittingelement has a thickness of 1 μm to 500 μm, and a part of the wavelengthconversion layer that continuously covers from an upper end of each ofthe side surfaces of the semiconductor light emitting element to amiddle of each of the side surfaces of the resin layer of the supportbody has a thickness of 1 μm to 500 μm.
 14. The light emitting deviceaccording to claim 13, wherein a part of the wavelength conversion layerthat covers the upper surface of the semiconductor light emittingelement has the thickness of 5 μm to 200 μm, and a part of thewavelength conversion layer that continuously covers from an upper endof each of the side surfaces of the semiconductor light emitting elementto a middle of each of the side surfaces of the resin layer of thesupport body has the thickness of 5 μm to 200 μm.
 15. The light emittingdevice according to claim 14, wherein a part of the wavelengthconversion layer that covers the upper surface of the semiconductorlight emitting element has the thickness of 10 μm to 100 μm, and a partof the wavelength conversion layer that continuously covers from anupper end of each of the side surfaces of the semiconductor lightemitting element to a middle of each of the side surfaces of the resinlayer of the support body has the thickness of 10 μm to 100 μm.
 16. Thelight emitting device according to claim 1, wherein the wavelengthconversion layer contains a phosphor with a content amount of thephosphor in the wavelength conversion layer being 0.1 mg/cm² to 50mg/cm² in mass per unit area.
 17. The light emitting device according toclaim 1, wherein a thickness of the supporting body is equal to orlarger than a thickness of the wavelength conversion layer.
 18. Thelight emitting device according to claim 1, wherein the supporting bodyhas a thickness of 20 μm to 200 μm.
 19. The light emitting deviceaccording to claim 18, wherein the supporting body has the thickness of50 μm to 100 μm.
 20. A light emitting device comprising: a semiconductorlight emitting element including a pair of electrodes; a supporting bodysupporting the semiconductor light emitting element, the supporting bodyincluding a pair of conductive members respectively connected to theelectrodes of the semiconductor light emitting element and a resin layercovering side surfaces of the conductive members; and a wavelengthconversion layer continuously covering an upper surface and sidesurfaces of the semiconductor light emitting element and side surfacesof the resin layer of the supporting body; wherein a thickness of thewavelength conversion layer at least at a lower portion of each of theside surfaces of the resin layer of the supporting body is smaller thana thickness of the wavelength conversion layer on the upper surface andthe side surfaces of the semiconductor light emitting element, and alower end of the wavelength conversion layer being positioned above alower surface of each of the conductive members and below an uppersurface of each of the conductive members.